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| SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B KTC9018 EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES Small Reverse Transfer Capacitance : Cre=0.65pF(Typ.). Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. High Transition Frequency : fT=800MHz(Typ.). A N K D E G MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 40 30 4 20 -20 625 150 -55 150 UNIT V L F H F 1 2 3 V V mA mA mW M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Frequency Collector-Base Time Constant Noise Figure Power Gain Note : hFE Classification E:40 59, F:54 80, ICBO IEBO ) TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=6V, f=1MHz, IE=0 VCE=10V, IC=8mA, f=100MHz VCE=6V, IE=-1mA, f=30MHz VCE=6V, IE=-1mA, f=100MHz 108, H:97 146, I:130 198 MIN. 40 500 15 TYP. 800 MAX. 0.1 0.1 198 1.0 30 4.0 pF MHz pS dB UNIT A A SYMBOL hFE (Note) Cre fT CC rbb' NF Gpe G:72 1994. 5. 11 Revision No : 0 1/1 |
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